? 2017 ixys corporation, all rights reserved IXXH40N65B4D1 v ces = 650v i c110 = 40a v ce(sat) ??? ??? ??? ??? ??? ? ? ? ? ? 2.0v t fi(typ) = 46ns ds100811(3/17) g = gate c = collector e = emitter tab = collector to-247 g c e tab extreme light punch through igbt for 5-30 khz switching features ? optimized for 5-30khz switching ? square rbsoa ? anti-parallel diode ? avalanche rated ? short circuit capability ? international standard package advantages ? high power density ? extremely rugged ? low gate drive requirement applications ? power inverters ? ups ? motor drives ? smps ? pfc circuits ? battery chargers ? welding machines ? lamp ballasts symbol test conditions characteristic values (t j = 25 ? c, unless otherwise specified) min. typ. max. bv ces i c = 250 ? a, v ge = 0v 650 v v ge(th) i c = 250 ? a, v ce = v ge 4.0 6.5 v i ces v ce = v ces , v ge = 0v 25 ? a t j = 150 ? c 1.5 ma i ges v ce = 0v, v ge = ? 20v ?????????????? 100 na v ce(sat) i c = 40a, v ge = 15v, note 1 1.66 2.00 v t j = 150 ? c 1.94 v symbol test conditions maximum ratings v ces t j = 25c to 175c 650 v v cgr t j = 25c to 175c, r ge = 1m ? 650 v v ges continuous 20 v v gem transient 30 v i c25 t c = 25c 115 a i c110 t c = 110c 40 a i f110 t c = 110c 50 a i cm t c = 25c, 1ms 225 a ssoa v ge = 15v, t vj = 150c, r g = 5 ? i cm = 80 a (rbsoa) clamped inductive load @v ce ? v ces t sc v ge = 15v, v ce = 360v, t j = 150c 10 s (scsoa) r g = 82 ? , non repetitive p c t c = 25c 455 w t j -55 ... +175 c t jm 175 c t stg -55 ... +175 c t l maximum lead temperature for soldering 300 c t sold 1.6 mm (0.062in.) from case for 10s 260 c m d mounting torque 1.13/10 nm/lb.in weight 6g xpt tm 650v igbt genx4 tm w/diode advance technical information
ixys reserves the right to change limits, test conditions, and dimensions. IXXH40N65B4D1 ixys mosfets and igbts are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 7,005,734 b2 7,157,338b2 by one or more of the following u.s. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405 b2 6,759,692 7,063,975 b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 7,071,537 notes: 1. pulse test, t ? 300 s, duty cycle, d ? 2%. 2. switching times & energy losses may increase for higher v ce (clamp), t j or r g . reverse diode (fred) symbol test conditions characteristic values (t j = 25c unless otherwise specified) min. typ. max. v f i f = 30a, v ge = 0v, note 1 2.6 v t j = 150c 1.3 v i rm 20 a t rr 155 ns r thjc 0.60 c/w i f = 30a, v ge = 0v, t j = 150c -di f /dt = 500a/ s, v r = 400v symbol test conditions characteristic values (t j = 25c unless otherwise specified) min. typ. max. g fs i c = 40a, v ce = 10v, note 1 14 24 s c ie s 2130 pf c oes v ce = 25v, v ge = 0v, f = 1mhz 200 pf c res 30 pf q g(on) 66 nc q ge i c = 40a, v ge = 15v, v ce = 0.5 ? v ces 14 nc q gc 23 nc t d(on) 20 ns t ri 60 ns e on 1.4 mj t d(off) 115 ns t fi 46 ns e of f 0.8 mj t d(on) 20 ns t ri 47 ns e on 2.5 mj t d(off) 136 ns t fi 116 ns e off 1.3 mj r thjc 0.33 c/w r thcs 0.21 c/w inductive load, t j = 25c i c = 40a, v ge = 15v v ce = 400v, r g = 5 ? note 2 inductive load, t j = 150c i c = 40a, v ge = 15v v ce = 400v, r g = 5 ? note 2 advance technical information the product presented herein is under development. the technical specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experi- ence, and constitute a "considered reflection" of the anticipated result. ixys reserves the right to change limits, test conditions, and dimensions without notice. 1 - gate 2,4 - collector 3 - emitter to-247 (ixyh) outline 3 d s a l d r e e1 l1 d1 d2 a2 q c b a 0p 0k m d b m b4 0p1 1 2 4 b c e ixys option r1 r1 r1 r1 j m c a m b2 a1
? 2017 ixys corporation, all rights reserved IXXH40N65B4D1 fig. 1. output characteristics @ t j = 25 o c 0 10 20 30 40 50 60 70 80 0 0.5 1 1.5 2 2.5 3 v ce - volts i c - amperes v ge = 15v 13v 12v 11v 10v 9v 7v 8v fig. 2. extended output characteristics @ t j = 25 o c 0 40 80 120 160 200 240 0 4 8 1216202428 v ce - volts i c - amperes v ge = 15v 10v 11v 13v 8v 9v 14v 12v 7v fig. 3. output characteristics @ t j = 150 o c 0 10 20 30 40 50 60 70 80 00.511.522.533.54 v ce - volts i c - amperes v ge = 15v 13v 12v 9v 10v 11v 6v 7v 8v fig. 4. dependence of v ce(sat) on junction temperature 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 -50 -25 0 25 50 75 100 125 150 175 t j - degrees centigrade v ce(sat) - normalized v ge = 15v i c = 40a i c = 20a i c = 80a fig. 5. collector-to-emitter voltage vs. gate-to-emitter voltage 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 7 8 9 101112131415 v ge - volts v ce - volts i c = 80a t j = 25oc 40a 20a fig. 6. input admittance 0 20 40 60 80 100 120 140 160 180 200 4 5 6 7 8 9 10 11 12 13 14 15 16 17 v ge - volts i c - amperes 150 o c t j = - 40 o c 25 o c
ixys reserves the right to change limits, test conditions, and dimensions. IXXH40N65B4D1 fig. 7. transconductance 0 5 10 15 20 25 30 35 0 20 40 60 80 100 120 140 160 180 200 220 i c - amperes g f s - siemens t j = - 40 o c 150 o c 25 o c fig. 10. reverse-bias safe operating area 0 10 20 30 40 50 60 70 80 90 100 200 300 400 500 600 700 v ce - volts i c - amperes t j = 150 o c r g = 5 ? dv / dt < 10v / ns fig. 8. gate charge 0 2 4 6 8 10 12 14 16 0 10203040506070 q g - nanocoulombs v ge - volts v ce = 325v i c = 40a i g = 10ma fig. 9. capacitance 10 100 1,000 10,000 0 5 10 15 20 25 30 35 40 v ce - volts capacitance - picofarad s f = 1 mh z c ies c oes c res fig. 11. maximum transient thermal impedance (igbt) 0.001 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 pulse width - second z (th)jc - k / w
? 2017 ixys corporation, all rights reserved IXXH40N65B4D1 fig. 12. inductive switching energy loss vs. gate resistance 0 1 2 3 4 5 6 7 5 10152025303540455055 r g - ohms e off - millijoules 1 3 5 7 9 11 13 15 e on - millijoules e off e on t j = 150 o c , v ge = 15v v ce = 400v i c = 40a i c = 80a fig. 15. inductive turn-off switching times vs. gate resistance 60 70 80 90 100 110 120 130 140 5 10152025303540455055 r g - ohms t f i - nanoseconds 50 100 150 200 250 300 350 400 450 t d(off) - nanoseconds t f i t d(off) t j = 150 o c, v ge = 15v v ce = 400v i c = 80a i c = 40a fig. 13. inductive switching energy loss vs. collector current 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 20 25 30 35 40 45 50 55 60 65 70 75 80 i c - amperes e off - millijoules 0 1 2 3 4 5 6 7 8 e on - millijoules e off e on r g = 5 ? , v ge = 15v v ce = 400v t j = 25 o c t j = 150 o c fig. 14. inductive switching energy loss vs. junction temperature 0 1 2 3 4 5 25 50 75 100 125 150 t j - degrees centigrade e off - millijoules 0 2 4 6 8 10 e on - millijoules e off e on r g = 5 ? , v ge = 15v v ce = 400v i c = 40a i c = 80a fig. 16. inductive turn-off switching times vs. collector current 0 20 40 60 80 100 120 140 160 180 200 20 25 30 35 40 45 50 55 60 65 70 75 80 i c - amperes t f i - nanosecond s 90 100 110 120 130 140 150 160 170 180 190 t d(off) - nanoseconds t f i t d(off) r g = 5 ? , v ge = 15v v ce = 400v t j = 150 o c t j = 25 o c fig. 17. inductive turn-off switching times vs. junction temperature 20 40 60 80 100 120 140 25 50 75 100 125 150 t j - degrees centigrade t f i - nanosecond s 60 80 100 120 140 160 180 t d(off) - nanoseconds t f i t d(off) r g = 5 ? , v ge = 15v v ce = 400v i c = 80a i c = 40a i c = 80a
ixys reserves the right to change limits, test conditions, and dimensions. IXXH40N65B4D1 fig. 20. inductive turn-on switching times vs. collector current 0 20 40 60 80 100 120 140 160 180 20 25 30 35 40 45 50 55 60 65 70 75 80 i c - amperes t r i - nanosecond s 14 16 18 20 22 24 26 28 30 32 t d(on) - nanoseconds t r i t d(on) r g = 5 ? , v ge = 15v v ce = 400v t j = 25 o c, 150 o c fig. 21. inductive turn-on switching times vs. junction temperature 0 20 40 60 80 100 120 140 160 180 200 25 50 75 100 125 150 t j - degrees centigrade t r i - nanosecond s 14 16 18 20 22 24 26 28 30 32 34 t d(on) - nanoseconds t r i t d(on) r g = 5 ? , v ge = 15v v ce = 400v i c = 80a i c = 40a fig. 19. inductive turn-on switching times vs. gate resistance 0 40 80 120 160 200 240 280 320 5 10152025303540455055 r g - ohms t r i - nanosecond s 0 15 30 45 60 75 90 105 120 t d(on) - nanoseconds t r i t d(on) t j = 150 o c, v ge = 15v v ce = 400v i c = 40a i c = 80a
? 2017 ixys corporation, all rights reserved IXXH40N65B4D1 ixys ref: ixx_40n65b4d1(e5-rz43) 3-3-17 fig. 22. diode forward characteristics 0 50 100 150 200 250 300 350 400 00.5 11.522.533.5 44.5 v f (v) i f (a) t j = 150 o c t j = 25 o c fig. 23. reverse recovery charge vs. -di f /dt 1 1.2 1.4 1.6 1.8 2 2.2 300 400 500 600 700 800 900 -di f / dt (a/ s) q rr ( c) 15a i f = 60a 30a t j = 150 o c v r = 400v fig. 24. reverse recovery current vs. -di f /dt 8 12 16 20 24 28 32 300 400 500 600 700 800 900 di f /dt (a/ s) i rr (a) i f = 60a, 30a, 15a t j = 150 o c v r = 400v fig. 25. reverse recovery time vs. -di f /dt 80 100 120 140 160 180 200 220 240 300 400 500 600 700 800 900 -di f /dt (a/ s) t rr (ns) i f = 60a 30a 15a t j = 150 o c v r = 400v fig. 26. dynamic parameters q rr, i rr vs. junction temperature 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 0 20 40 60 80 100 120 140 160 t j ( o c) k f k f i rr k f q rr v r = 400v i f = 30a -dif /dt = 500a/ s fig. 27. maximum transient thermal impedance (diode) 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 10 pulse width - seconds z (th)jc - k / w
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